Name: /Tools-Info/Fgl60n100bntdtu On
Brand: EstiSource
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FGL60N100BNTDTU ON

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FGL60N100BNTDTU ON

Introduction
Material Composition
Manufacturing Process
Challenges and Limitations
Costing
Properties and Characteristics
Frequently asked questions
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FGL60N100BNTDTU IGBT Transistor (1000V, 60A, TO-3PN)

is a high-voltage, high-current Insulated Gate Bipolar Transistor (IGBT) manufactured by ON Semiconductor. Rated for 1000V and 60A, it is designed to deliver high efficiency and fast switching capabilities in demanding industrial applications. Combining the gate drive ease of MOSFETs with the low conduction loss of BJTs, this IGBT offers an excellent trade-off between speed and power handling. Packaged in a TO-3PN format, it is engineered for use in motor control systems, UPS systems, SMPS, and power inverters.

How EstiSource Helps

EstiSource connects buyers with vetted suppliers of high-performance discrete semiconductors like IGBTs. Whether you're sourcing for production or prototyping, our platform ensures part authentication, traceability, and price benchmarking. We also enable rapid RFQ cycles and technical vetting for procurement teams evaluating complex components like power transistors.

Why Choose EstiSource for FGL60N100BNTDTU Sourcing

With EstiSource, engineering and sourcing teams gain a competitive edge by accessing high-reliability parts with cost and lead time transparency. Our technical validation processes reduce risk of counterfeit parts, and our supplier network spans global and local inventories—helping you meet critical deadlines while ensuring performance specifications. We don’t just connect you with suppliers—we optimize your entire sourcing experience.

1. Material Composition

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The FGL60N100BNTDTU is composed of a silicon-based IGBT die mounted on a thermally efficient metal tab housed in a TO-3PN plastic encapsulation. Key materials include:

Semiconductor Die: High-voltage silicon with NPT (Non-Punch-Through) IGBT structure
Encapsulation: Thermoset plastic compound for electrical insulation
Leads: Tin-plated copper for high conductivity and corrosion resistance
Die Attach & Bond Wires: Silver epoxy or solder-based die attach with aluminum bond wires for low resistance

These materials are selected for performance under thermal and electrical stress while ensuring long operational life and reliability.

2. Manufacturing Process

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Wafer Fabrication:
The IGBT die is fabricated using diffusion and ion implantation processes to create NPN and PNP junctions optimized for high voltage operation.

Die Attachment & Wire Bonding:
The die is mounted on a metal leadframe using high-conductivity adhesives or solder, followed by ultrasonic or thermosonic bonding of aluminum wires to the die pads.

Molding & Packaging:
The leadframe is encapsulated in thermoset plastic using transfer molding to form the TO-3PN package. This provides mechanical strength, thermal stability, and electrical insulation.

Testing & Binning:
Each device undergoes rigorous functional testing for threshold voltage, switching time, breakdown voltage, and current handling. Devices are binned for parameter consistency.

Marking & Inspection:
Final visual and laser marking ensures part identification and lot traceability before packing for shipment.

3. Challenges and Limitations

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Thermal Runaway Risk

High power dissipation can lead to thermal instability if not paired with adequate heat sinking or airflow.

Switching Loss Trade-Offs

While efficient, IGBT switching speeds are slower than MOSFETs, potentially limiting use in high-frequency designs.

Gate Drive Requirements

IGBTs require specific gate driver circuits and protection features such as desaturation detection or soft turn-off.

Parasitic Inductance Sensitivity

In compact layouts, stray inductances can lead to ringing or oscillation, necessitating careful PCB design and snubbing.

Safe Operating Area (SOA)

Limited current handling under high voltage pulses requires cautious transient handling to avoid failure.

4. Costing

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Unit Cost Estimate (Standard OEM Batches): ₹90–₹130 per piece

Prototyping (Low Volume): ₹150–₹170 per piece due to handling and setup

Bulk Orders (1000+ units): ₹70–₹95 per piece

Major Cost Drivers:

Silicon die and packaging process
Test and inspection procedures
Import logistics (ON Semiconductor products are often sourced globally)

5. Properties and Characteristics

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Voltage Rating

1000V Collector-Emitter

Current Rating

60A Continuous Collector Current

Low Saturation Voltage

Typically 2.0V, aiding efficiency

Fast Switching

Suitable for 20–40 kHz PWM control

High Input Impedance

Gate-controlled via voltage drive (~±20V max)

Thermal Resistance

Junction-to-case (RθJC) ≈ 0.4°C/W, enabling compact thermal design

Reliable Avalanche Capability

For voltage spikes and load dump conditions

TO-3PN Package

Optimized for thermal dissipation with large metal tab and isolated mounting

6. Frequently Asked Questions

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Q1: What applications is the FGL60N100BNTDTU best suited for?

This IGBT is ideal for use in motor drives, UPS systems, power inverters, welding equipment, and high-voltage DC-to-AC conversion systems.

Q2: Can it be used in high-frequency switching circuits?

While IGBTs are slower than MOSFETs, this model performs well in moderate frequencies (20–40 kHz), making it suitable for industrial inverters and similar systems.

Q3: What kind of gate driver does this require?

A driver capable of ±15V gate drive is ideal, with fast rise/fall times and protection features like Miller clamp or soft turn-off.

Q4: Does it have short-circuit protection built-in?

No, external circuitry is needed to monitor desaturation or current limits. Protection should be added externally.

Q5: What’s the alternative package if I want better thermal handling?

Consider modules or press-fit packages if thermal demands are higher or if compact SMD mounting is not required.

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